Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform
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× Table 1.. Comparison of Performances of Some SiN Waveguide-Based Polarization Handling Devices. Ref. Platform Band Length (?m) IL at Centered Wavelength (dB) Bandwidth (nm) Technology Description Experiment or Not [28 ]. SiN-Si multilayer. C. 576. < 1.5 (TE), < 1.5 (TM). 80 ( I L < 1.5 d B , C T > 19 d B ). PSR function in Si layer, working by mode evolution, tip structures included.. Yes. [29 ]. SiN-Si multilayer. C. 335. < 0.2 (TE), < 0.5 (TM). 190 ( I L < 0.5 d B , E R > 17 d B ). PSR function in Si layer, working by mode evolution, Y junction and tip structure included.. Not. [30 ]. SiN with Si metasurface. Mid-IR. ? 360 . 0.31 (TE), 0.21 (TM). 100 ( I L < 1.4 d B , E R > 19.5 d B ). PBS function in SiN layer, assisted by Si metasurface structures, Y junction structure included.. Not. [25 ]. Pure SiN. C. 3000. < 1.5 (TE), < 1.5 (TM). 35 ( I L < 1.5 d B , E R > 17 d B ). PSR function in SiN layer, working by mode evolution, two-step etching required.. Yes. [44 ]. Pure SiN. Visible. ? 776 . < 1 (TM). 110 ( I L < 1 d B , E R > 17.5 d B ). PR function in SiN layer, working by mode evolution, two-step etching required.. Yes. [45 ]. Pure SiN, thick-film. C. 55. < 1.5 (TM). 100 ( P C E > 90 % , E R ? 10 d B ). PR function in SiN layer, working by mode interference, thick-film SiN processing techniques, partial etching for the waveguide corner required.. Yes. Ours. SiN-Si multilayer. C. 156. 0.2 (TE), 0.61?(TM). 150 ( I L < 1 d B , C T > 25 d B ). PSR function in SiN layer, working by mode interference, strip waveguides and DC structures, and no small features included.. Not. Close .
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