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Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform
× Table 1..
Comparison of Performances of Some SiN Waveguide-Based Polarization Handling Devices.
Ref. Platform Band Length (?m) IL at Centered Wavelength (dB) Bandwidth (nm) Technology Description Experiment or Not
[28 ].
SiN-Si multilayer.
C.
576.
< 1.5 (TE), < 1.5 (TM).
80 ( I L < 1.5 d B , C T > 19 d B ).
PSR function in Si layer, working by mode evolution, tip structures included..
Yes.
[29 ].
SiN-Si multilayer.
C.
335.
< 0.2 (TE), < 0.5 (TM).
190 ( I L < 0.5 d B , E R > 17 d B ).
PSR function in Si layer, working by mode evolution, Y junction and tip structure included..
Not.
[30 ].
SiN with Si metasurface.
Mid-IR.
? 360 .
0.31 (TE), 0.21 (TM).
100 ( I L < 1.4 d B , E R > 19.5 d B ).
PBS function in SiN layer, assisted by Si metasurface structures, Y junction structure included..
Not.
[25 ].
Pure SiN.
C.
3000.
< 1.5 (TE), < 1.5 (TM).
35 ( I L < 1.5 d B , E R > 17 d B ).
PSR function in SiN layer, working by mode evolution, two-step etching required..
Yes.
[44 ].
Pure SiN.
Visible.
? 776 .
< 1 (TM).
110 ( I L < 1 d B , E R > 17.5 d B ).
PR function in SiN layer, working by mode evolution, two-step etching required..
Yes.
[45 ].
Pure SiN, thick-film.
C.
55.
< 1.5 (TM).
100 ( P C E > 90 % , E R ? 10 d B ).
PR function in SiN layer, working by mode interference, thick-film SiN processing techniques, partial etching for the waveguide corner required..
Yes.
Ours.
SiN-Si multilayer.
C.
156.
0.2 (TE), 0.61?(TM).
150 ( I L < 1 d B , C T > 25 d B ).
PSR function in SiN layer, working by mode interference, strip waveguides and DC structures, and no small features included..
Not.
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