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OSA | Design of all-optical D flip-flop using photonic crystal waveguides for optical computing and networking
× Tables (6) . Table 1. . Function of D Flip-flop D Clock Q n Q ? n 0 . 0 . Q n . Q ? n . 1 . 0 . Q n . Q ? n . 0 . 1 . 0 . 1 . 1 . 1 . 1 . 0 . Table 2. . Simulation Parameters Used for Analysis of Proposed Design SI. No. Simulation Parameter Value 1. . Simulation type . 2D . 2. . Mesh size . 0.05 ? m ( X ) / 0.05 ? m ( Y ) . 3. . Boundary conditions . Anisotropic perfectly matched layer (PML) . 4. . Step size . 1000 . 5. . Anisotropic PML layer number . 10 . 6. . Theoretical reflection coefficient . 1.0e-12 . 7. . Real anisotropic PML tensor parameter . 10 . 8. . Power of grading polynomial . 3.5 . Table 3. . Type of Interference at Junctions J 1 and J 2 for All Input Combinations of AODFF Input Logic Input Phase Path Traverse Path Difference Phase Difference Type of Interference D Clock R D Clock R 0 . 0 . 1 . — . — . 180° . At J 1 . R = 4 a . — . — . — . 1 . 0 . 1 . 0° . — . 180° . At J 1 . D = 4 a . 0 . 180° . Destructive . R = 4 a . 0 . 1 . 1 . — . 0° . 180° . At J 2 . C L K = 4 a . 5a . 180° . Constructive . R = 9 a . 1 . 1 . 1 . 180° . 180° . 180° . At J 1 . D = 4 a . 0 . 0° . Constructive . R = 4 a . At J 2 . C L K = 4 a . A . 0° . Destructive . J 1 = 5a . Table 4. . Normalized Power Value of AODFF for Various RI Values Normalized Output Power Input Logic Refractive Index (RI) Variations . 3.42 . 3.44 . 3.46 . 3.48 . 3.5 . D . Clock . R . Q n . Q ? n . Q n . Q ? n . Q n . Q ? n . Q n . Q ? n . Q n . Q ? n . 0 . 0 . 1 . 0.11 . 0.2 . 0.04 . 0.17 . 0.04 . 0.18 . 0.16 . 0.18 . 0.16 . 0.21 . 1 . 0 . 1 . 0.14 . 0.02 . 0.25 . 0.01 . 0.22 . 0.003 . 0.07 . 0.005 . 0.04 . 0.02 . 0 . 1 . 1 . 0.2 . 1.11 . 0.1 . 1.02 . 0.17 . 0.96 . 0.22 . 0.9 . 0.26 . 1.0 . 1 . 1 . 1 . 0.93 . 0.09 . 0.7 . 0.09 . 0.9 . 0.14 . 0.95 . 0.05 . 0.8 . 0.09 . Table 5. . Normalized Power Value of AODFF for Various Silicon Rod Radius Values Normalized Output Power Input Logic Silicon Rod Radius . 0.18 . 0.19 . 0.2 . D . Clock . R . Q n . Q ? n . Q n . Q ? n . Q n . Q ? n . 0 . 0 . 1 . 0.08 . 0.19 . 0.04 . 0.18 . 0.07 . 0.17 . 1 . 0 . 1 . 0.26 . 0.005 . 0.22 . 0.003 . 0.23 . 0.004 . 0 . 1 . 1 . 0.17 . 0.99 . 0.17 . 0.96 . 0.14 . 0.97 . 1 . 1 . 1 . 0.88 . 0.17 . 0.9 . 0.14 . 0.89 . 0.10 . Table 6. . Comparison of Dimensions and Other Parameters of Proposed Device with Prior Devices Material Refractive Index Dimensions Insertion Loss Contrast Ratio Transmission Ratio Ref. Silicon . RI: 3.4 . 10.2 × 12.6 ? m 2 . — . 6.91?dB . — . [ 32 ] . Silicon . RI: 3.46 . 12.6 × 16.8 ? m 2 . — . Q n = 9.63 d B . — . [ 33 ] . Q ? n = 5.84 d B . Silicon . RI: 3.46 . 8.4 × 5.4 ? m 2 . 0.087?dB . Q n = 13.5 d B . > 96 % . Proposed method . Q ? n = 25 d B . Close .
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