Selenium alloyed tellurium oxide for amorphous p-channel transistors - Nature
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Abstract. Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simplicity, and uniform manufacturing. Traditional amorphous hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation of high-mobility amorphous n-type metal oxides, such as a-InGaZnO1, and their integration into thin-film transistors (TFTs) have propelled advancements in modern large-area electronics and new-generation displays2–8. However, finding comparable p-type counterparts poses significant challenges, impeding the progress of complementary metal-oxide-semiconductor (CMOS) technology and integrated circuits9–11. Here, we introduce a pioneering design strategy for amorphous p-type semiconductors, incorporating high-mobility tellurium within an amorphous tellurium sub-oxide matrix, and demonstrate its utility in high-performance, stable p-channel TFTs, and complementary circuits. Theoretical analysis unveils a delocalised valence band from tellurium 5p bands with shallow acceptor states, enabling excess hole doping and transport. Selenium alloying suppresses hole concentrations and facilitates the p orbital connectivity, realising high-performance p-channel TFTs with an average field-effect hole mobility of ~15 cm2 V?1 s?1 and on/off current ratios of 106?~?107, along with wafer-scale uniformity and long-term stabilities under bias stress and ambient aging. This study represents a crucial stride towards establishing commercially viable amorphous p-channel TFT technology and complementary electronics in a low-cost and industry-compatible manner. Access through your institution Buy or subscribe This is a preview of subscription content, access via your institution Access options. Access through your institution Access through your institution Change institution Buy or subscribe Access Nature and 54 other Nature Portfolio journals Get Nature+, our best-value online-access subscription 24,99?? /?30?days cancel any time Learn more Subscription info for Chinese customers We have a dedicated website for our Chinese customers. Please go to naturechina.com to subscribe to this journal. Go to naturechina.com Rent or buy this article Prices vary by article type from $1.95 to $39.95 Learn more Prices may be subject to local taxes which are calculated during checkout Additional access options:. Log in . Learn about institutional subscriptions . Read our FAQs . Contact customer support . Author information. Authors and Affiliations. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China Ao Liu?&?Sai Bai Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea Ao Liu,?Youjin Reo,?Taoyu Zou,?Taesu Choi,?Huihui Zhu?&?Yong-Young Noh Department of Chemistry, Northwestern University, Evanston, Illinois, USA Ao Liu?&?Huihui Zhu Korea Research Institute of Standards and Science, Daejeon, Republic of Korea Yong-Sung Kim Department of Nano Science, University of Science and Technology, Daejeon, Republic of Korea Yong-Sung Kim Beamline Research Division, Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, Republic of Korea Min Gyu Kim School of Physics, University of Electronic Science and Technology of China, Chengdu, China Huihui Zhu Authors Ao Liu View author publications You can also search for this author in PubMed ? Google Scholar Yong-Sung Kim View author publications You can also search for this author in PubMed ? Google Scholar Min Gyu Kim View author publications You can also search for this author in PubMed ? Google Scholar Youjin Reo View author publications You can also search for this author in PubMed ? Google Scholar Taoyu Zou View author publications You can also search for this author in PubMed ? Google Scholar Taesu Choi View author publications You can also search for this author in PubMed ? Google Scholar Sai Bai View author publications You can also search for this author in PubMed ? Google Scholar Huihui Zhu View author publications You can also search for this author in PubMed ? Google Scholar Yong-Young Noh View author publications You can also search for this author in PubMed ? Google Scholar Corresponding authors. Correspondence to Ao Liu, Huihui Zhu or Yong-Young Noh. Supplementary information. Supplementary Information. This file contains Supplementary Information, including Supplementary Figures 1-4, Supplementary Tables 1-2, and additional references. Peer Review File. Rights and permissions. Reprints and permissions About this article. Cite this article. Liu, A., Kim, YS., Kim, M.G. et al. Selenium alloyed tellurium oxide for amorphous p-channel transistors. Nature (2024). https://doi.org/10.1038/s41586-024-07360-w Download citation Received: 07 February 2023 Accepted: 27 March 2024 Published: 10 April 2024 DOI: https://doi.org/10.1038/s41586-024-07360-w Share this article. Anyone you share the following link with will be able to read this content: Get shareable link Sorry, a shareable link is not currently available for this article. Copy to clipboard Provided by the Springer Nature SharedIt content-sharing initiative Comments. By submitting a comment you agree to abide by our Terms and Community Guidelines. 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