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Selenium alloyed tellurium oxide for amorphous p-channel transistors - Nature
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Abstract.
Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simplicity, and uniform manufacturing. Traditional amorphous hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation of high-mobility amorphous n-type metal oxides, such as a-InGaZnO1, and their integration into thin-film transistors (TFTs) have propelled advancements in modern large-area electronics and new-generation displays2–8. However, finding comparable p-type counterparts poses significant challenges, impeding the progress of complementary metal-oxide-semiconductor (CMOS) technology and integrated circuits9–11. Here, we introduce a pioneering design strategy for amorphous p-type semiconductors, incorporating high-mobility tellurium within an amorphous tellurium sub-oxide matrix, and demonstrate its utility in high-performance, stable p-channel TFTs, and complementary circuits. Theoretical analysis unveils a delocalised valence band from tellurium 5p bands with shallow acceptor states, enabling excess hole doping and transport. Selenium alloying suppresses hole concentrations and facilitates the p orbital connectivity, realising high-performance p-channel TFTs with an average field-effect hole mobility of ~15 cm2 V?1 s?1 and on/off current ratios of 106?~?107, along with wafer-scale uniformity and long-term stabilities under bias stress and ambient aging. This study represents a crucial stride towards establishing commercially viable amorphous p-channel TFT technology and complementary electronics in a low-cost and industry-compatible manner.
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Author information.
Authors and Affiliations.
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China
Ao Liu?&?Sai Bai
Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, Republic of Korea
Ao Liu,?Youjin Reo,?Taoyu Zou,?Taesu Choi,?Huihui Zhu?&?Yong-Young Noh
Department of Chemistry, Northwestern University, Evanston, Illinois, USA
Ao Liu?&?Huihui Zhu
Korea Research Institute of Standards and Science, Daejeon, Republic of Korea
Yong-Sung Kim
Department of Nano Science, University of Science and Technology, Daejeon, Republic of Korea
Yong-Sung Kim
Beamline Research Division, Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, Republic of Korea
Min Gyu Kim
School of Physics, University of Electronic Science and Technology of China, Chengdu, China
Huihui Zhu
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Min Gyu Kim View author publications
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Youjin Reo View author publications
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Corresponding authors.
Correspondence to Ao Liu, Huihui Zhu or Yong-Young Noh.
Supplementary information.
Supplementary Information.
This file contains Supplementary Information, including Supplementary Figures 1-4, Supplementary Tables 1-2, and additional references.
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Cite this article.
Liu, A., Kim, YS., Kim, M.G. et al. Selenium alloyed tellurium oxide for amorphous p-channel transistors. Nature (2024). https://doi.org/10.1038/s41586-024-07360-w
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Received: 07 February 2023
Accepted: 27 March 2024
Published: 10 April 2024
DOI: https://doi.org/10.1038/s41586-024-07360-w
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